PBSS306NZ,135 datasheet

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Маркировка

PBSS306NZ,135
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS306NZ,135 Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dual Collector Current - Collector (ic) (max): 5.1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 110MHz ID_COMPONENTS: 1949438 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5.1 A Maximum Operating Frequency: 110 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Power Dissipation: 2000 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 300mV @ 255mA, 5.1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5.1 A Gain Bandwidth Product fT: 110 MHz DC Collector/Base Gain hfe Min: 200 at 0.5 A at 2 V, 150 at 1 A at 2 V, 100 at 2 A at 2 V, 50 at 4 A at 2 V, 30 at 5 A at 2 V DC Current Gain hFE Max: 200 at 0.5 A at 2 V Maximum Power Dissipation: 2000 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS306NZ Other Names: 934059047135, PBSS306NZ /T3
Количество страниц

14 шт.
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